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LP3929 Datasheet, PDF (1/14 Pages) National Semiconductor (TI) – High Speed Bi-Directional Level Shifter and Ultra Low-Dropout CMOS Voltage Regulator and Line | |||
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December 14, 2007
LP3929
High Speed Bi-Directional Level Shifter and Ultra Low-
Dropout CMOS Voltage Regulator and Line Protection
General Description
The LP3929 is designed for portable and wireless applica-
tions requiring level translation and power supply generation
in a compact footprint.
The device level translates 1.8 V LVCMOS on the host (A)
side to 2.85 V LVCMOS levels on the card (B) side for a min-
iSD / SD 4-bit bi-directional data bus.
Independent direct control of the CMD, Data0 and Data1-3
paths support mini SD state machine requirements. A shut-
down pin is provided for the level shifters and regulator. The
f_CLK_A is a feedback clock to the host which can be used
to overcome level shifter bus delay.
The built-in low-dropout voltage regulator is ideal for mobile
phone and battery powered wireless applications. It provides
up to 200 mA from a 3.05 V to 5.5 V input. It is stable with
small 1.0 µF ±30% ceramic and high quality tantalum output
capacitors, requiring smallest possible PC board area.
The card (B port) side channels have integration of ASIP (Ap-
plication Specific Integrated Passives) - on chip integrated
pull-up, pull-down, series resistors and capacitors for EMC
filtering. It is designed to tolerate IEC61000-4-2 level 4 ESD:
±15 kV air discharge, ±8 kV direct contact.
Key Specifications
Level Shifter:
â 6-signal Level Shifter (5 bi-directional and 1 uni-direction)
â 3 ns (typ) propagation delay
â Channel-to-channel skew < 1 ns (max)
Low-Dropout Regulator:
â 3.05 V to 5.5 V input range
â 2.85 V at 200 mA
â Fast Turn-On time: 30 µs (typ)
â 110 mV (max) dropout with 200 mA load
â Thermal shutdown at 160°C (typ)
Protection Block (B Side):
â Robust IEC ESD Protection: ±15 kV Air Gap, ±8 kV Direct
Contact
â ASIP / EMI Filtering
Features
â Ultra small micro SMD 24 bump package
â 6-signal level translation 1.8 V to 2.85 V
â LDO stable with ceramic and high quality tantalum
capacitors
Typical Application Circuit
© 2007 National Semiconductor Corporation 201868
20186801
www.national.com
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