ISL73096RH Datasheet, PDF (1/4 Pages) Intersil Corporation – Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

Radiation Hardened Ultra High Frequency
NPN/PNP Transistor Arrays
ISL73096RH, ISL73127RH, ISL73128RH
The ISL73096RH, ISL73127RH and ISL73128RH are
radiation hardened bipolar transistor arrays. The
ISL73096RH consists of three NPN transistors and two
PNP transistors on a common substrate. The
ISL73127RH consists of five NPN transistors on a
common substrate. The ISL73128RH consists of five PNP
transistors on a common substrate. One of our bonded
wafer, dielectrically isolated fabrication processes
provides an immunity to Single Event Latch-up and the
capability of highly reliable performance in any radiation
environment.
The high gain-bandwidth product and low noise figure of
these transistors make them ideal for use in high
frequency amplifier and mixer applications. Monolithic
construction of the NPN and PNP transistors provides the
closest electrical and thermal matching possible. Access
is provided to each terminal of the transistors for
maximum application flexibility.
Specifications for Rad Hard QML devices are
controlled by the Defense Supply Center in
Columbus (DSCC). The SMD numbers listed here
must be used when ordering.
Detailed Electrical Specifications for these
devices are contained in SMD 5962-07218. A
“hot-link” is provided on our website for
downloading.
Features
• Electrically Screened to SMD # 5962-07218
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
- Gamma Dose (γ) . . . . . . . . . . 3 x 10⁵RAD(Si)
- SEL Immune . . Bonded Wafer Dielectric Isolation
• NPN Gain Bandwidth Product (F_T) . . . 8GHz (Typ)
• NPN Current Gain (h_FE). . . . . . . . . . . . 130 (Typ)
• NPN Early Voltage (V_A) . . . . . . . . . . . . 50V (Typ)
• PNP Gain Bandwidth Product (F_T) . . . 5.5GHz (Typ)
• PNP Current Gain (h_FE) . . . . . . . . . . . . . 60 (Typ)
• PNP Early Voltage (V_A) . . . . . . . . . . . . 20V (Typ)
• Noise Figure (50Ω) at 1GHz . . . . . . . . 3.5dB (Typ)
• Collector-to-Collector Leakage . . . . . . <1pA (Typ)
• Complete Isolation Between Transistors
Applications
• High Frequency Amplifiers and Mixers
- Refer to Application Note AN1503
• High Frequency Converters
• Synchronous Detector
Ordering Information
ORDERING NUMBER
5962F0721801V9A
5962F0721801VXC
5962F0721802V9A
5962F0721802VXC
5962F0721803V9A
5962F0721803VXC
ISL73096RHF/PROTO
ISL73096RHX/SAMPLE
ISL73127RHF/PROTO
ISL73127RHX/SAMPLE
PART NUMBER
ISL73096RHVX
ISL73096RHVF (Notes 1, 2)
ISL73127RHVX
ISL73127RHVF (Notes 1, 2)
ISL73128RHVX
ISL73128RHVF (Notes 1, 2)
ISL73096RHF/PROTO
ISL73096RHX/SAMPLE
ISL73127RHF/PROTO
ISL73127RHX/SAMPLE
TEMP. RANGE
(°C)
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
PACKAGE
(Pb-free)
DIE
16 LD FLATPACK
DIE
16 LD FLATPACK
DIE
16 LD FLATPACK
DIE
DIE
November 12, 2009
FN6475.3
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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