ISL71091SEH33 Datasheet, PDF (1/16 Pages) Intersil Corporation – 3.3V Radiation Hardened Ultra Low Noise,

DATASHEET
3.3V Radiation Hardened Ultra Low Noise, Precision
Voltage Reference
ISL71091SEH33
The ISL71091SEH33 is an ultra low noise, high DC accuracy
precision voltage reference with a wide input voltage range
from 4.6V to 30V. It uses Intersil’s advanced bipolar technology
to achieve 5.2µV_P-P 0.1Hz to 10Hz noise with an initial voltage
accuracy of 0.05%.
The ISL71091SEH33 offers a 3.3V output voltage option with
6ppm/°C temperature coefficient and also provides excellent
line and load regulation. The device is offered in an 8 Ld
flatpack package.
The ISL71091SEH33 is ideal for high-end instrumentation,
data acquisition and processing applications requiring high DC
precision where low noise performance is critical.
Applications
• Precision voltage sources for data acquisition system for
space applications
• Strain and pressure gauge for space applications
• Radiation hardened PWM requiring precision outputs
Related Literature
• AN1906, “ISL71091SEHXXEV1Z User’s Guide”
• AN1938, “Single Event Effects (SEE) Testing of the
ISL71091SEHxx Precision Voltage References Family”
• AN1939, “Total Dose Testing of the ISL71091SEHxx
Precision Voltage Reference”
Features
• Reference output voltage . . . . . . . . . . . . . . . . . . 3.3V ±0.05%
• Accuracy over temperature . . . . . . . . . . . . . . . . . . . . . ±0.15%
• Accuracy over radiation . . . . . . . . . . . . . . . . . . . . . . . . ±0.25%
• Output voltage noise . . . . . . 5.2µV_P-P typical (0.1Hz to 10Hz)
• Supply current . . . . . . . . . . . . . . . . . . . . . . . . . 300µA (typical)
• V_OS temperature coefficient . . . . . . . . . . 6ppm/°C maximum
• Output current capability . . . . . . . . . . . . . . . . . . . 10mA/-5mA
• Line regulation . . . . . . . . . . . . . . . . . . . . . . 5ppm/V maximum
• Load regulation (sourcing) . . . . . . . . . 25ppm/mA maximum
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• Radiation environment
- High dose rate (50-300rad(Si)/s) . . . . . . . . . . . 100krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 100krad(Si)*
- SEL/SEB free (V_CC = 36V) . . . . . . . . . . . . 86MeV•cm²/mg
*Product capability established by initial characterization. The
“EH” version is acceptance tested on a wafer-by-wafer basis to
50krad(Si) at low dose rate.
• Electrically screened to SMD 5962-14208
VIN
0.1µF
ISL71091SEH33
1
DNC
2
VIN
3
COMP
1nF ₄
GND
8
DNC
7
DNC
6
VOUT
5
TRIM
VREF
1µF
C
REFIN DACOUT
VDD
VDD
D12
VEE
VEE
D0
1.1k
NOTE: Select C to minimize
settling time.
BIPOFF
GND
HS-565BRH
FIGURE 1. ISL71091SEH33 TYPICAL APPLICATION DIAGRAM
3.303
3.302
3.301
UNIT 1
UNIT 2
3.300
3.299
3.298
UNIT 3
UNIT 4
UNIT 5
3.297
-65 -45 -25
-5 15 35 55 75
TEMPERATURE (°C)
95 115 135
FIGURE 2. V_OUT vs TEMPERATURE
March 18, 2016
1
FN8429.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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