ISL71091SEH20 Datasheet, PDF (1/16 Pages) Intersil Corporation – 2.048V Radiation Hardened Ultra Low Noise

DATASHEET
2.048V Radiation Hardened Ultra Low Noise, Precision
Voltage Reference
ISL71091SEH20
The ISL71091SEH20 is an ultra low noise, high DC accuracy
precision voltage reference with a wide input voltage range
from 4.2V to 30V. It uses Intersil’s advanced bipolar technology
to achieve 3.8µV_P-P 0.1Hz to 10Hz noise with an initial voltage
accuracy of 0.05%.
The ISL71091SEH20 offers a 2.048V output voltage option
with 6ppm/°C temperature coefficient and also provides
excellent line and load regulation. The device is offered in an
8 Ld flatpack package.
The ISL71091SEH20 is ideal for high-end instrumentation,
data acquisition and processing applications requiring high DC
precision where low noise performance is critical.
Applications
• Precision voltage sources for data acquisition system for
space application
• Strain and pressure gauge for space applications
• Radiation hardened PWM requiring precision outputs
Related Literature
• AN1906, “ISL71091SEHxxEV1Z User’s Guide”
• AN1938, “Single Event Effects (SEE) Testing of the
ISL71091SEHxx Precision Voltage References Family”
• AN1939, “Total Dose Testing of the ISL71091SEHxx
Precision Voltage Reference”
Features
• Reference output voltage . . . . . . . . . . . . . . . .2.048V ±0.05%
• Accuracy over temperature . . . . . . . . . . . . . . . . . . . . . ±0.15%
• Accuracy over radiation . . . . . . . . . . . . . . . . . . . . . . . . ±0.25%
• Output voltage noise . . . . . . 3.8µV_P-P typical (0.1Hz to 10Hz)
• Supply current . . . . . . . . . . . . . . . . . . . . . . . . . 300µA (typical)
• V_OS temperature coefficient . . . . . . . . . . 6ppm/°C maximum
• Output current capability . . . . . . . . . . . . . . . . . . . 10mA/-5mA
• Line regulation . . . . . . . . . . . . . . . . . . . . . . 5ppm/V maximum
• Load regulation (Sourcing) . . . . . . . . . 40ppm/mA maximum
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• Radiation environment
- High dose rate (50 to 300rad(Si)/s) . . . . . . . . . 100krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 100krad(Si)*
- SEL/SEB free (V_CC = 36V) . . . . . . . . . . . . 86MeV•cm²/mg
*Product capability established by initial characterization. The
“EH” version is acceptance tested on a wafer-by-wafer basis to
50krad(Si) at low dose rate.
• Electrically screened to SMD 5962-14208
VIN
0.1µF
ISL71091SEH20
1
DNC
8
DNC
2
VIN
7
DNC
3 _COMP
1nF ₄
GND
VOUT ⁶
5
TRIM
VDD
VEE
NOTE: Select C to minimize
settling time.
REFIN DACOUT
VDD
D12
VEE
D0
BIPOFF
GND
HS-565BRH
VREF
1µF
C
1.1k
FIGURE 1. ISL71091SEH20 TYPICAL APPLICATION DIAGRAM
2.051
2.050
2.049
2.048
UNIT 3
2.047
2.046
UNIT 1
UNIT 2
UNIT 4
UNIT 5
2.045
-65
-45 -25 -5 15 35 55 75 95
TEMPERATURE (°C)
FIGURE 2. V_OUT vs TEMPERATURE
115 135
March 17, 2016
1
FN8632.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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