ISL6614B_06 Datasheet, PDF (1/11 Pages) Intersil Corporation – Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP

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Data Sheet
Dual Advanced Synchronous Rectified
Buck MOSFET Drivers with Pre-POR OVP
The ISL6614B integrates two ISL6613B MOSFET drivers
and is specifically designed to drive two Channel MOSFETs
in a synchronous rectified buck converter topology. This
driver combined with HIP63xx or ISL65xx Multi-Phase Buck
PWM controllers and N-Channel MOSFETs forms complete
core-voltage regulator solutions for advanced
microprocessors.
The ISL6614B features 7V rising threshold and drives both
the upper and lower gates simultaneously over a range from
5V to 12V. This drive-voltage provides the flexibility
necessary to optimize applications involving trade-offs
between gate charge and conduction losses. This driver is
optimized for POL DC/DC Converters for IBA Systems.
An advanced adaptive zero shoot-through protection is
integrated to prevent both the upper and lower MOSFETs
from conducting simultaneously and to minimize the dead
time. These products add an overvoltage protection feature
operational before VCC exceeds its turn-on threshold, at
which the PHASE node is connected to the gate of the low
side MOSFET (LGATE). The output voltage of the converter
is then limited by the threshold of the low side MOSFET,
which provides some protection to the microprocessor if the
upper MOSFET(s) is shorted during start-up.
The ISL6614B also features a three-state PWM input which,
working together with Intersil’s multi-phase PWM controllers,
prevents a negative transient on the output voltage when the
output is shut down. This feature eliminates the Schottky
diode that is used in some systems for protecting the load
from reversed output voltage events.
ISL6614B
January 3, 2006
FN9206.2
Features
• Pin-to-pin Compatible with HIP6602 SOIC family
• Quad N-Channel MOSFET Drives for Two Synchronous
Rectified Bridges
• Low VCC Rising Threshold (7V) for IBA Applications
• Advanced Adaptive Zero Shoot-Through Protection
- Body Diode Detection
- Auto-zero of r_DS(ON) Conduction Offset Effect
• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
• Internal Bootstrap Schottky Diode
• Bootstrap Capacitor Overcharging Prevention
• Supports High Switching Frequency (up to 1MHz)
- 3A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
• Three-State PWM Input for Output Stage Shutdown
• Three-State PWM Input Hysteresis for Applications With
Power Sequencing Requirement
• Pre-POR Overvoltage Protection
• VCC Undervoltage Protection
• Expandable Bottom Copper Pad for Enhanced Heat
Sinking
• QFN Package:
- Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat
No Leads - Package Outline
- Near Chip Scale Package footprint, which improves
PCB efficiency and has a thinner profile
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
• Optimized for POL DC/DC Converters for IBA Systems
• Core Regulators for Intel^® and AMD^® Microprocessors
• High Current DC/DC Converters
• High Frequency and High Efficiency VRM and VRD
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
• Technical Brief 400 and 417 for Power Train Design,
Layout Guidelines, and Feedback Compensation Design
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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