HUF76113T3ST Datasheet, PDF (1/12 Pages) Fairchild Semiconductor – 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

TM
Data Sheet
HUF76113T3ST
June 2000 File Number 4388.3
4.7A, 30V, 0.031 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET
This N-Channel power MOSFET is
® manufactured using the innovative
UltraFET process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery-
operated products.
Formerly developmental type TA76113.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76113T3ST
SOT-223
76113
NOTE: HUF76113T3ST is available only in tape and reel.
Features
• Logic Level Gate Drive
• 4.7A, 30V
• Ultra Low On-Resistance, r_DS(ON) = 0.031Ω
• Temperature Compensating PSPICE^® Model
• Temperature Compensating SABER™ Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
SOT-223
SOURCE
DRAIN
GATE
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET® is a registered trademark of Intersil Corporation.
PSPICE® is a registered trademark of MicroSim Corporation. SABER™ is a trademark of Analogy, Inc.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000