HUF76107D3 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

Data Sheet
HUF76107D3, HUF76107D3S
July 1999
File Number 4701.1
20A, 30V, 0.052 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs
These N-Channel power
MOSFETs are manufactured using
the innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is
capable of withstanding high energy in the avalanche mode
and the diode exhibits very low reverse recovery time and
stored charge. It was designed for use in applications
where power efficiency is important, such as switching
regulators, switching converters, motor drivers, relay
drivers, low-voltage bus switches, and power management
in portable and battery-operated products.
Formerly developmental type TA76107.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76107D3
TO-251AA
76107D
HUF76107D3S
TO-252AA
76107D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUF76107D3ST.
Packaging
JEDEC TO-251AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Features
• Logic Level Gate Drive
• 20A, 30V
• Ultra Low On-Resistance, r_DS(ON) = 0.052Ω
• Temperature Compensating PSPICE^® Model
• Temperature Compensating SABER^© Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
GATE
SOURCE
DRAIN
(FLANGE)
58
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE^® is a registered trademark of MicroSim Corporation.
SABER^© is a Copyright of Analogy Inc. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999