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| A28F010 Datasheet, PDF (15/23 Pages) Intel Corporation – 1024K (128K x 8) CMOS FLASH MEMORY | |||
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A28F010
DC CHARACTERISTICS CMOS COMPATIBLE (Continued)
Symbol Parameter
Limits
Notes
Unit
Min Typical Max
Test Conditions
IPP2
VPP
12
Programming
Current
80
30
mA VPP e VPPH
Programming in Progress
IPP3
VPP Erase
12
Current
40
30
mA VPP e VPPH
Erasure in Progress
IPP4
VPP Program
12
Verify Current
20
50
mA VPP e VPPH Program
Verify in Progress
IPP5
VPP Erase Verify
12
Current
50
50
mA VPP e VPPH
Erase Verify in Progress
VIL
Input Low
Voltage
b0 5
08
V
VIH
Input High
Voltage
0 7 VCC
VCC a 0 5 V
VOL
VOH1
VOH2
VID
Output Low
Voltage
Output High
Voltage
0 85 VCC
VCC b 0 4
A9 Intelligent
Identifier Voltage
11 50
0 45
13 00
V IOL e 2 1 mA
VCC e VCC Min
V
IOH e b2 5 mA
VCC e VCC Min
IOH e b100 mA
VCC e VCC Min
V
IID
IID
VPPL
VPPH
VCC ID Current
VPP ID Current
VPP during Read-
Only Operations
VPP during
Read Write
Operations
1
1
0 00
11 40
10
30
mA A9 e ID
90
500
mA A9 e ID
65
V NOTE Erase Programs
are Inhibited when
VPP e VPPL
12 60
V
VLKO
VCC Erase Write
25
V
Lock Voltage
CAPACITANCE(3) TA e 25 C f e 1 0 MHz
Symbol
Parameter
Limits
Min
Max
Unit
Conditions
CIN
COUT
Address Control Capacitance
Output Capacitance
8
pF
VIN e 0V
12
pF
VOUT e 0V
NOTES
1 All currents are in RMS unless otherwise noted Typical values at VCC e 5 0V VPP e 12 0V Te 25 C
2 Not 100% tested characterization data available
3 Sampled not 100% tested
4 ââTypicalsââ are not guaranteed but are based on a limited number of samples from production lots
15
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