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28F640P3 Datasheet, PDF (1/102 Pages) Intel Corporation – Intel StrataFlash Embedded Memory | |||
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Intel StrataFlash® Embedded Memory
(P30)
1-Gbit P30 Family
Datasheet
Product Features
â High performance
â Security
â 85/88 ns initial access
â One-Time Programmable Registers:
â 40 MHz with zero wait states, 20 ns clock-to-
data output synchronous-burst read mode
⢠64 unique factory device identifier bits
⢠64 user-programmable OTP bits
â 25 ns asynchronous-page read mode
⢠Additional 2048 user-programmable OTP bits
â 4-, 8-, 16-, and continuous-word burst mode
â Selectable OTP Space in Main Array:
â Buffered Enhanced Factory Programming
(BEFP) at 5 µs/byte (Typ)
⢠4x32KB parameter blocks + 3x128KB main
blocks (top or bottom configuration)
â 1.8 V buffered programming at 7 µs/byte (Typ)
â Absolute write protection: VPP = VSS
â Architecture
â Multi-Level Cell Technology: Highest Density
at Lowest Cost
â Power-transition erase/program lockout
â Individual zero-latency block locking
â Individual block lock-down
â Asymmetrically-blocked architecture
â Software
â Four 32-KByte parameter blocks: top or
â 20 µs (Typ) program suspend
bottom configuration
â 20 µs (Typ) erase suspend
â 128-KByte main blocks
â Intel® Flash Data Integrator optimized
â Voltage and Power
â VCC (core) voltage: 1.7 V â 2.0 V
â VCCQ (I/O) voltage: 1.7 V â 3.6 V
â Standby current: 55 µA (Typ) for 256-Mbit
â Basic Command Set and Extended Command
Set compatible
â Common Flash Interface capable
â Density and Packaging
â 4-Word synchronous read current:
13 mA (Typ) at 40 MHz
â 64/128/256-Mbit densities in 56-Lead TSOP
package
â Quality and Reliability
â Operating temperature: â40 °C to +85 °C
â 64/128/256/512-Mbit densities in 64-Ball
Intel® Easy BGA package
⢠1-Gbit in SCSP is â30 °C to +85 °C
â 64/128/256/512-Mbit and 1-Gbit densities in
â Minimum 100,000 erase cycles per block
Intel® QUAD+ SCSP
â ETOX⢠VIII process technology (130 nm)
â 16-bit wide data bus
The Intel StrataFlash® Embedded Memory (P30) product is the latest generation of Intel
StrataFlash® memory devices. Offered in 64-Mbit up through 1-Gbit densities, the P30 device
brings reliable, two-bit-per-cell storage technology to the embedded flash market segment.
Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR
device, and support for code and data storage. Features include high-performance synchronous-
burst read mode, fast asynchronous access times, low power, flexible security options, and three
industry standard package choices.
The P30 product family is manufactured using Intel® 130 nm ETOX⢠VIII process technology.
Order Number: 306666, Revision: 001
April 2005
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