28F016XD Datasheet, PDF (1/54 Pages) Intel Corporation – 16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY

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28F016XD
16-MBIT (1 MBIT x 16)
DRAM-INTERFACE FLASH MEMORY
n 85 ns Access Time (t_RAC)
 Supports both Standard and Fast-
Page-Mode Accesses
n Multiplexed Address Bus
 RAS# and CAS# Control Inputs
n No-Glue Interface to Many Memory
Controllers
n SmartVoltage Technology
 User-Selectable 3.3V or 5V V_CC
 User-Selectable 5V or 12V V_PP
n 0.33 MB/sec Write Transfer Rate
n x16 Architecture
n 56-Lead TSOP Type I Package
n Backwards-Compatible with 28F008SA
Command Set
n 2 µA Typical Deep Power-Down Current
n 1 mA Typical I_CC Active Current in Static
Mode
n 32 Separately-Erasable/Lockable
64-Kbyte Blocks
n 1 Million Erase Cycles per Block
n State-of-the-Art 0.6 µm ETOX™ IV Flash
Technology
Intel’s 28F016XD 16-Mbit flash memory is a revolutionary architecture which is the ideal choice for designing
truly revolutionary high-performance products. Combining its DRAM-like read performance and interface with
the intrinsic nonvolatility of flash memory, the 28F016XD eliminates the traditional redundant memory
paradigm of shadowing code from a slow nonvolatile storage source to a faster execution memory, such as
DRAM, for improved system performance. The innovative capabilities of the 28F016XD enable the design of
direct-execute code and mass storage data/file flash memory systems.
The 28F016XD’s DRAM-like interface with a multiplexed address bus, flexible V_CC and V_PP voltages, power
saving features, extended cycling, fast program and read performance, symmetrically-blocked architecture,
and selective block locking provide a highly flexible memory component suitable for resident flash component
arrays on the system board or SIMMs. The DRAM-like interface with RAS# and CAS# control inputs allows
for easy migration to flash memory in existing DRAM-based systems. The 28F016XD’s dual read voltage
allows the same component to operate at either 3.3V or 5.0V V_CC. Programming voltage at 5.0V V_PP
minimizes external circuitry in minimal-chip, space critical designs, while the 12.0V V_PP option maximizes
program/erase performance. The x16 architecture allows optimization of the memory-to-processor interface.
Its high read performance combined with flexible block locking enable both storage and execution of
operating systems/application software and fast access to large data tables. The 28F016XD is manufactured
on Intel’s 0.6 µm ETOX IV process technology.
December 1996
Order Number: 290533-004