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TLE7183QU Datasheet, PDF (9/28 Pages) Infineon Technologies AG – 3 Phase Driver IC Automotive Power
TLE7183QU
General Product Characteristics
Absolute Maximum Ratings (cont’d)1)
40 °C ≤ Tj ≤ 150 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values Unit Conditions
Min.
Max.
4.1.28 Lead soldering temperature
(1/16’’ from body)
Tsol
–
260
°C –
4.1.29 Peak reflow soldering temperature2)
Tref
–
Thermal Resistance
260
°C –
4.1.30 Junction to case
Power Dissipation
RthjC
–
5
K/W –
4.1.31 Power Dissipation (DC) @ TCASE=125°C Ptot
–
2
W–
ESD Susceptibility
4.1.32 ESD Resistivity3)
VESD
–
2
4.1.33 ESD Resistivity to GND
VESD
-500
500
4.1.34 ESD Resistivity Pin 1, 12, 13, 24, 25, 36, VESD1, 12, -750
750
37,48 (corner pins) to GND
13, 24, 25, 36,
kV
V
CDM4)
V
CDM4)
37, 48
1) Not subject to production test, specified by design.
2) Reflow profile IPC/JEDEC J-STD-020C
3) ESD susceptibility HBM according to EIA/JESD 22-A 114B
4) ESD susceptibility, Charged Device Model “CDM” ESDA STM5.3.1
Attention: Stresses above the ones listed here may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Attention: Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as “outside” normal operating
range. Protection functions are not designed for continuous repetitive operation.
4.2
Functional Range
Pos. Parameter
4.2.1 Supply voltage1)2)
4.2.2
4.2.3
Duty cycle3)
PWM frequency
4.2.4
4.2.5
Quiescent current4)
Quiescent current into VDH
4.2.6 Supply current at Vs
Symbol
VS
D
fPWM
Limit Values
Min.
Max.
5.5
20
5.5
28
0
100
0
25
IQ
–
30
IQ_VDH
–
30
IVs
–
175
–
175
110
110
Unit Conditions
V
DC
t<1s
%
–
kHz Total gate charge
400nC
µA
VS,VDH<20 V
µA
VDH<20V;
VS pin open
fPWM=25kHz
QG=250nC:
mA VS = 5.5V
VS = 14V
VS = 17V
VS = 20V
Data Sheet
9
Rev. 1.1, 2016-01-28