TLE6282G Datasheet, PDF (9/14 Pages) Infineon Technologies AG – Dual Half Bridge Driver IC

Data Sheet TLE6282G
pins (voltage devider network, pls. see Application block diagram on pg. 2)
t_WAIT ≈ 3 x C_Bx x 2 x R, whereas R = 10 kΩ
• Enable the Driver IC via DT/DIS pin
• Start the operation by applying the desired pulse patterns. Do not apply any pulse pat-
terns to the IHx or ILx pins, before the C_Bx capacitors are charged up.
Alternatively, the Driver IC can be enabled via the DT/DIS pin right after ramping up the sup-
ply voltage V_S. Now, the two Low Side MOSFETs are turned on via the ILx control inputs (to
pull down the Sources of the High Side MOSFETs and to charge up the bootstrap capacitors
C_Bx within several 10 µs). The regular operation can be started when the bootstrap capaci-
tors are charged up.
Short Circuit protection
The current threshold limit to activate the Short Circuit protection function can be adjusted to
larger values, it can not be adjusted to lower values. This can be done by external resistors
to form voltage deviders across the “sense element” (pls. see Application block diagram on
pg. 2), consisting of the Drain-Source-Terminals, a fraction of the PCB trace and – in some
cases – current sense resistors (used by the µC not by the Driver IC).
The Short Circuit protection can be disabled for the High Side MOSFETs by shorting DH1
with SH1 and DH2 with SH2 on the PCB; in this case the DHx pins may not be connected to
the Drains of the associated MOSFETs. To disable Short Circuit protection for the Low Side
MOSFETs the DL1 and DL2 pin should be connected to the Driver IC´s Ground.
Shut down of the driver
A shut down can be caused by undervoltage or short circuit.
A short circuit will shut down only the affected Mosfet until a reset of the error register by a
disable of the driver occurs. A shut down due to short circuit will occur only when the Short
Circuit criteria V_DS(SCP) is met for a duration equal to or longer than the Short Circuit filter time
t_SCP(off). Yet, the exposure to or above V_DS(SCP) is not counted or accumulated. Hence, repeti-
tive Short Circuit conditions shorter than t_scp(off) will not result in a shut down of the affected
MOSFET.
An undervoltage shut down shuts only the affected output down. The affected output will
auto restart after the undervoltage situation is over.
Operation at Vs<12V
If Vs<11.5V the gate voltage will not reach 10V. It will reach approx. Vs-1.5V, dependent on
duty cycle, total gate charge and switching frequency.
Operation at different voltages for Vs, DH1 and DH2
If DH1 and DH2 are used with a voltage higher than Vs, a duty cycle of 100% can not be
guaranteed. In this case the driver is acting like a normal driver IC based on the bootstrap
principle. This means that after a maximum “On” time of the highside switch of more than
1ms a refresh pulse to charge the bootstrap capacitor of about 1µs is needed to avoid un-
dervoltage lock out of this output stage.
Operation at extreme duty cycle:
The integrated charge pump allows an operation at 100% duty cycle. The charge pump is
strong enough to replace leakage currents during “on”-phase of the highside switch. The
gate charge for fast switching of the highside switches is supplied by the bootstrap capaci-
tors. This means, that the bootstrap capacitor needs a minimum charging time of about 1µs,
if the highside switch is operated in PWM mode (e.g. with 20kHz a maximum duty cycle of
96% can be reached). The exact value for the upper limit is given by the RC time formed by
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Rev 2.2 2006-03-07