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SPP12N50C3_09 Datasheet, PDF (9/14 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology
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17 Avalanche power losses
PAR = f (f )
parameter: EAR=0.6mJ
300
W
200
150
100
50
SPP12N50C3
SPI12N50C3, SPA12N50C3
18 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
10 4
pF
Ciss
10 3
10 2
Coss
10 1
Crss
10 0
0
10
4
10 5
19 Typ. Coss stored energy
Eoss=f(VDS)
Hz
10 6
f
10 -1
0
100
200
300
V
500
VDS
6
µJ
4
3
2
1
0
0
100
200
300
Rev. 3.1
V
500
VDS
Page 9
2009-11-30
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