SPP12N50C3_09 Datasheet, PDF (8/14 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

SPP12N50C3
SPI12N50C3, SPA12N50C3
13 Forward characteristics of body diode
I_F = f (V_SD)
parameter: T_j , tp = 10 µs
10 ^{2 SPP12N50C3}
A
14 Avalanche SOA
I_AR = f (t_AR)
par.: T_j ≤ 150 °C
11
A
9
8
10 ¹
7
6
5
T j(START) =25°C
10 ⁰
10 ^-1
0
T_j = 25 °C typ
T_j = 150 °C typ
T_j = 25 °C (98%)
T_j = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
V_SD
4
3
T j(START) =125°C
2
1
0
10
-3
10 ^-2
10 ^-1
10 ⁰
10 ¹
10 ²
µs ^{10 4}
t_AR
15 Avalanche energy
E_AS = f (T_j)
par.: I_D = 5.5 A, V_DD = 50 V
350
mJ
16 Drain-source breakdown voltage
V_(BR)DSS = f (T_j)
SPP12N50C3
600
V
250
200
150
100
50
0
20 40 60 80 100 120 °C 160
T_j
570
560
550
540
530
520
510
500
490
480
470
460
450
-60 -20
20
60 100 °C
180
T_j
Rev. 3.1
Page 8
2009-11-30