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| SKW15N120_08 Datasheet, PDF (9/13 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | |||
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SKW15N120
400ns
350ns
300ns
250ns
200ns
150ns
IF=15A
IF=7.5A
100ns
50ns
0ns
200A/µs 400A/µs 600A/µs 800A/µs 1000A/µs
d i F / d t , DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery time as
a function of diode current slope
(VR = 800V, Tj = 150°C,
dynamic test circuit in Fig.E )
2.5µC
2.0µC
1.5µC
1.0µC
IF=15A
IF=7.5A
0.5µC
0.0µC
200A/µs 400A/µs 600A/µs 800A/µs 1000A/µs
d i F / d t , DIODE CURRENT SLOPE
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(VR = 800V, Tj = 150°C,
dynamic test circuit in Fig.E )
30A
25A
IF=15A
20A
15A
IF=7.5A
10A
5A
0A
200A/µs 400A/µs 600A/µs 800A/µs 1000A/µs
d i F / d t , DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current
as a function of diode current slope
(VR = 800V, Tj = 150°C,
dynamic test circuit in Fig.E )
400A/µs
300A/µs
200A/µs
100A/µs
IF=7.5A
IF=15A
0A/µs
200A/µs 400A/µs 600A/µs 800A/µs 1000A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(VR = 800V, Tj = 150°C,
dynamic test circuit in Fig.E )
Power Semiconductors
9
Rev. 2_2 Sep 08
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