SKW15N120_08 Datasheet, PDF (2/13 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

SKW15N120
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
R_thJC
R_thJCD
R_thJA
Conditions
Max. Value
Unit
0.63
K/W
1.5
40
Electrical Characteristic, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage V _{( B R ) C E S} V _{G E} = 0 V ,
I_C=1000µA
Collector-emitter saturation voltage
V_CE(sat)
V_GE = 15V, I_C=15A
T_j=25°C
T_j=150°C
Diode forward voltage
V_F
V_GE=0V, I_F=15A
T_j=25°C
T_j=150°C
Gate-emitter threshold voltage
V_GE(th) I_C=600µA,V_CE=V_GE
Zero gate voltage collector current I _{C E S}
V_CE=1200V,V_GE=0V
T_j=25°C
T_j=150°C
Gate-emitter leakage current
Transconductance
I_GES
g_fs
V_CE=0V,V_GE=20V
V_CE=20V, I_C=15A
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
C_iss
C_oss
C_rss
Q_Gate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current¹⁾
L_E
I_C(SC)
V_CE=25V,
V_GE=0V,
f=1MHz
V_CC=960V, I_C=15A
V_GE=15V
V_GE=15V,t_SC≤10µs
100V≤V_CC≤1200V,
T_j ≤ 150°C
min.
1200
2.5
-
-
3
-
-
-
-
-
-
-
-
-
Value
typ.
-
3.1
3.7
2.0
1.75
4
-
-
-
11
1250
155
65
130
13
145
Unit
max.
-V
3.6
4.3
2.5
5
µA
200
800
100 nA
-S
1500 pF
185
80
175 nC
- nH
-A
1) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
Power Semiconductors
2
Rev. 2_2 Sep 08