PXAC243502FV_16 Datasheet, PDF (9/10 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz

PXAC243502FV
Package Outline Specifications
Package H-37275-4
2X 45° X 1.19
[45° X .047]
13.72
[.540]
CL
D1
2x (2.03
[.080])
D2
[ ] 4X R0.51+–00..3183
R.020+–..000155
2.13
[.084] SPH
1.63
[.064]
G1
CL
24.40
[1.000]
31.242±0.28
[1.230±.011]
CL
G2
CL
4X 11.68
[.460]
3.226±0.508
[.127±.020]
CL _9.14
[.360]
10.160
[.400]
(16.61
[.654])
[ ] ^4.57
+0.25
–0.13
.180+-.0.00150
32.26
[1.270]
C66065-A0004-C250-01-0027 H-37275-4-X
h -37275-4-r02_ PO_ 12-22-2014
S
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.13 [0.005].
4. Pins: D1, D2 – drain; G1, G2 – gate; S (flange) – source.
5. Lead thickness: 0.127 ± 0.001 [.005 ±0.002].
6. Gold plating thickness: 1.1 ± 0.38 micron [45 ± 15 microinch].
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http://www.infineon.com/rfpower
Data Sheet
9 of 10
Rev. 03.2, 2016-06-22