PXAC243502FV_16 Datasheet, PDF (5/10 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz

PXAC243502FV
Typical RF Performance (cont.)
Pulse CW Performance
at selected V_DD
I_DQ = 850 mA, ƒ = 2400 MHz
20
60
Efficiency
Gain
15
40
10
5
27
V_DD = 24 V
V_DD = 28 V
V_DD = 32 V
35
43
51
Output Power (dBm)
20
c243502fv-gr6c
0
59
See next page for Load Pull Performance
Small Signal CW
Gain & Input Return Loss
V_DD = 28 V, I_DQ = 850 mA
18
17
16
15
14
13
12
11
10
2150
Input Return Loss
Gain
2250
2350
2450
Frequency (MHz)
-8
-9
-10
-11
-12
-13
-14
-15
c243502fv-gr7
-16
2550
Data Sheet
5 of 10
Rev. 03.2, 2016-06-22