IPB65R190C7 Datasheet, PDF (9/15 Pages) Infineon Technologies AG – Metal Oxide Semiconductor Field Effect Transistor

650VCoolMOS™C7PowerTransistor
IPB65R190C7
Diagram5:Typ.outputcharacteristics
50
40
30
20
10
0
0
5
10
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
20 V
10 V
8V
7V
Diagram6:Typ.outputcharacteristics
30
25
20
15
6V
10
5.5 V
5
5V
4.5 V
0
15
20
0
5
10
VDS[V]
ID=f(VDS);Tj=125°C;parameter:VGS
20 V
10 V
8V
7V
6V
5.5 V
5V
4.5 V
15
20
Diagram7:Typ.drain-sourceon-stateresistance
0.7
5.5 V
6V
6.5 V
7V
Diagram8:Drain-sourceon-stateresistance
0.50
0.45
0.6
20 V
0.40
10 V
0.35
0.5
0.30
0.25
98%
typ
0.4
0.20
0.15
0.3
0
0.10
5
10
15
20
25
30
-50 -25 0 25 50 75 100 125 150
ID[A]
Tj[°C]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
RDS(on)=f(Tj);ID=5.7A;VGS=10V
Final Data Sheet
9
Rev.2.1,2013-10-21