IPB65R190C7 Datasheet, PDF (2/15 Pages) Infineon Technologies AG – Metal Oxide Semiconductor Field Effect Transistor

650VCoolMOS™C7PowerTransistor
IPB65R190C7
1Description
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.
CoolMOS™C7seriescombinestheexperienceoftheleadingSJ
MOSFETsupplierwithhighclassinnovation.Theproductportfolio
providesallbenefitsoffastswitchingsuperjunctionMOSFETsoffering
betterefficiency,reducedgatecharge,easyimplementationand
outstandingreliability.
Features
•IncreasedMOSFETdv/dtruggedness
•BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
•BestinclassRDS(on)/package
•Easytouse/drive
•Pb-freeplating,halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Benefits
•Enablinghighersystemefficiency
•Enablinghigherfrequency/increasedpowerdensitysolutions
•Systemcost/sizesavingsduetoreducedcoolingrequirements
•Highersystemreliabilityduetoloweroperatingtemperatures
Applications
PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server,
Telecom,UPSandSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
D²PAK
tab
2
1
3
Gate
Pin 1
Drain
Pin 2, tab
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
700
V
RDS(on),max
190
mΩ
Qg.typ
23
nC
ID,pulse
49
A
Eoss@400V
2.7
µJ
Body diode di/dt
55
A/µs
Type/OrderingCode
IPB65R190C7
Package
PG-TO 263
Marking
65C7190
RelatedLinks
see Appendix A
Final Data Sheet
2
Rev.2.1,2013-10-21