IKCM15H60HA_16 Datasheet, PDF (9/16 Pages) Infineon Technologies AG – Control Integrated POwer System

Control Integrated POwer System (CIPOS™)
IKCM15H60HA
Static Parameters
(VDD = 15V and TJ = 25°C, if not stated otherwise)
Description
Condition
Collector-Emitter saturation voltage
IC = 10A
TJ = 25°C
150°C
Diode forward voltage
IF = 10A
TJ = 25°C
150°C
Collector-Emitter leakage current
VCE = 600V
Logic "1" input voltage (LIN, HIN)
Logic "0" input voltage (LIN, HIN)
ITRIP positive going threshold
ITRIP input hysteresis
VDD and VBS supply under voltage
positive going threshold
VDD and VBS supply under voltage
negative going threshold
VDD and VBS supply under voltage
lockout hysteresis
Input clamp voltage (HIN, LIN, ITRIP) Iin=4mA
Quiescent VBx supply current
(VBx only)
HIN = 0V
Quiescent VDD supply current
(VDD only)
LIN = 0V, HINX = 5V
Input bias current
VIN = 5V
Input bias current
VIN = 0V
ITRIP input bias current
VITRIP = 5V
VFO input bias current
VFO = 5V, VITRIP = 0V
VFO output voltage
IFO = 10mA, VITRIP = 1V
Symbol
Value
Unit
min typ max
VCE(sat)
-
-
1.9
2.8
V
2.4
-
VF
-
1.75 2.4
V
-
1.8
-
ICES
-
-
1 mA
VIH
-
2.1
2.5
V
VIL
0.7
0.9
-
V
VIT,TH+
400
470
540 mV
VIT,HYS
40
70
-
mV
VDDUV+
VBSUV+
10.8
12.1
13.0
V
VDDUV-
VBSUV-
9.5
10.4 11.2
V
VDDUVH
VBSUVH
1.0
1.7
-
V
VINCLAMP
9.0
10.1 12.5
V
IQBS
-
300 500 µA
IQDD
-
370 900 µA
IIN+
-
1
1.5 mA
IIN-
-
2
-
µA
IITRIP+
-
65
150 µA
IFO
-
2
-
nA
VFO
-
0.5
-
V
Datasheet
9
<Revision 2.3>
<2016-08-01>