IKCM15H60HA_16 Datasheet, PDF (10/16 Pages) Infineon Technologies AG – Control Integrated POwer System

Control Integrated POwer System (CIPOS™)
IKCM15H60HA
Dynamic Parameters
(VDD = 15V and TJ = 25°C, if not stated otherwise)
Description
Condition
Symbol
Value
Unit
min typ max
Turn-on propagation delay time
Turn-on rise time
Turn-on switching time
Reverse recovery time
VLIN, HIN = 5V,
IC = 10A,
VDC = 300V
ton
-
610
-
ns
tr
-
30
-
ns
tc(on)
-
100
-
ns
trr
-
115
-
ns
Turn-off propagation delay time
Turn-off fall time
Turn-off switching time
VLIN, HIN = 0V,
IC = 10A,
VDC = 300V
toff
-
790
-
ns
tf
-
65
-
ns
tc(off)
-
115
-
ns
Short circuit propagation delay time From VIT,TH+ to 10% ISC
tSCP
-
1440
-
ns
Input filter time ITRIP
VITRIP = 1V
tITRIPmin
-
530
-
ns
Input filter time at LIN, HIN for turn
on and off
VLIN, HIN = 0V & 5V
tFILIN
-
290
-
ns
Fault clear time after ITRIP-fault
VITRIP = 1V
tFLTCLR
40
65
200 µs
Deadtime between low side and high
side
DTPWM
0.5
-
-
µs
Deadtime of gate drive circuit
DTIC
-
380
-
ns
IGBT turn-on energy (includes reverse
recovery of diode)
VDC = 300V, IC = 10A
TJ = 25°C
150°C
Eon
-
235
-
µJ
-
340
-
IGBT turn-off energy
VDC = 300V, IC = 10A
TJ = 25°C
150°C
Eoff
-
150
-
µJ
-
220
-
Diode recovery energy
VDC = 300V, IC = 10A
TJ = 25°C
150°C
Erec
-
30
-
µJ
-
60
-
Bootstrap Parameters
(TJ = 25°C, if not stated otherwise)
Description
Condition
Value
Symbol
Unit
min typ max
Repetitive peak reverse voltage
VRRM
600
-
-
V
VS2 or VS3 = 300V, TJ = 25°C
35
Bootstrap diode resistance of
U-phase¹
VS2 and VS3 = 0V, TJ = 25°C
VS2 or VS3 = 300V, TJ = 125°C
RBS1
-
40
50
-
Ω
VS2 and VS3 = 0V, TJ = 125°C
65
Reverse recovery time
IF = 0.6A, di/dt = 80A/µs
trr_BS
-
50
-
ns
Forward voltage drop
IF = 20mA, VS2 and VS3 = 0V
VF_BS
-
2.6
-
V
1 _{RBS2 and RBS3 have same values to RBS1.}
Datasheet
10
<Revision 2.3>
<2016-08-01>