BSC077N12NS3G_15 Datasheet, PDF (9/13 Pages) Infineon Technologies AG – OptiMOSTM3 Power-Transistor, 120 V

OptiMOS^TM3Power-Transistor,120V
BSC077N12NS3G
Diagram13:Avalanchecharacteristics
10²
25 °C
100 °C
125 °C
10¹
Diagram14:Typ.gatecharge
10
96 V
8
60 V
24 V
6
4
10⁰
10⁰
10¹
10²
tAV[µs]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
2
0
10³
0
20
40
60
80
Qgate[nC]
VGS=f(Qgate);ID=25Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
135
Gate charge waveforms
130
125
120
115
110
105
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.8,2015-12-15