BSC077N12NS3G_15 Datasheet, PDF (1/13 Pages) Infineon Technologies AG – OptiMOSTM3 Power-Transistor, 120 V

BSC077N12NS3G
MOSFET
OptiMOS^TM3Power-Transistor,120V
Features
•N-channel,normallevel
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•150°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC¹⁾fortargetapplication
•Idealforhigh-frequencyswitchingandsynchronousrectification
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
120
V
RDS(on),max
7.7
mΩ
ID
98
A
SuperSO8
8 _{7 65}
56 ₇₈
1
23
4
4321
S1
8D
S2
7D
S3
6D
G4
5D
Type/OrderingCode
BSC077N12NS3 G
Package
PG-TDSON-8
Marking
077N12NS
RelatedLinks
-
1) _{J-STD20 and JESD22}
Final Data Sheet
1
Rev.2.8,2015-12-15