BGA622_08 Datasheet, PDF (9/12 Pages) Infineon Technologies AG – Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection

3
Measured Parameters
BGA622
Measured Parameters
Power Gain |S |², G = f(f)
21
ma
V = 2.75V, I = 5.8mA
CC
tot−on
25
G
20 ^ma
|S |²
21
15
10
5
0
0
1
2
3
4
5
6
Frequency [GHz]
Off Gain |S |² = f(f)
21
V = 2.75V, V = 2.75V, I = 0.3mA
CC
OUT
tot−off
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
0
1
2
3
4
5
6
Frequency [GHz]
Reverse Isolation |S | = f(f)
12
V = 2.75V, I = 5.8mA
CC
tot−on
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
0
1
2
3
4
5
6
Frequency [GHz]
Matching |S |, |S | = f(f)
11 22
V = 2.75V, I = 5.8mA
CC
tot−on
0
S
11
−2
−4
−6
−8
−10
−12
−14
−16
−18
S
22
−20
0
1
2
3
4
5
6
Frequency [GHz]
Data Sheet
9
Rev. 2.2, 2008-04-14