BGA622_08 Datasheet, PDF (6/12 Pages) Infineon Technologies AG – Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection

2
Electrical Characteristics
BGA622
Electrical Characteristics
2.1
Electrical characteristics at T_A = 25 °C (measured according to Figure 2)
V_CC = 2.75 V, Frequency = 1.575 GHz, unless otherwise specified
Table 3 Electrical Characteristics
Parameter
Symbol
Values
Unit Note /
Min.
Typ.
Max.
Test Condition
Insertion power gain
|S₂₁|²
15.0
dB
Insertion power gain (Off-State)
|S₂₁|²
-27
dB
Input return loss (On-State)
RL_in
5
dB
Output return loss (On-State)
RL_out
12
dB
Noise figure (Z_S = 50 Ω)
Input third order intercept point¹⁾
(On-State)
Input third order intercept point¹⁾
(Off - State)
F_50Ω
IIP₃
IIP₃
1.00
0
20
dB
dBm
dBm
f = 0.1 GHz
∆f = 1 MHz,
P_IN = -28 dBm
∆f = 1 MHz,
P_IN = -8 dBm
Input power at 1 dB gain compression P_-1dB
-16.5
dBm
Total device off current
I_tot-off
130
260
420
µA
V_CC = 2.75 V,
V_out = V_CC
Total device on current
I_tot-on
4.0
5.8
7.8
mA V_CC = 2.75 V
On / Off switch control voltage
V_on
0
0.8
V
V_CC = 2.75 V
ON-Mode:
V_out = V_on
V_off
2.0
3.5
V
V_CC = 2.75 V
OFF-Mode:
V_out = V_off
1) IP₃ values depends on termination of all intermodulation frequency components. Termination used for this measurement
is 50 Ω from 0.1 to 6 GHz
Data Sheet
6
Rev. 2.2, 2008-04-14