TLE4209G Datasheet, PDF (8/15 Pages) Infineon Technologies AG – Automotive Power

TLE4209G
General Product Characteristics
Electrical Characteristics (cont’d)
V_S = 8 V to 18 V, T_j = -40 °C to +150 °C, I_OUT1-2 = 0 A, all voltages with respect to ground, positive current flowing
into pin (unless otherwise specified)
Pos. Parameter
Symbol
Limit Values
Unit Conditions
Min. Typ. Max.
4.4.14 Total drop
I_OUT = 0.3 A
4.4.15 Total drop
I_OUT = 0.7 A
Outputs OUT1-2, Clamp Diodes
V_SAT
–
V_SAT
–
1.2
1.7
V
1.6
2.5
V
V_SAT = V_{SAT U} + V_{SAT L}
V_SAT = V_{SAT U} + V_{SAT L}
4.4.16 Forward voltage; upper
4.4.17 Upper leakage current
4.4.18 Forward voltage; lower
Input-Interface, Input REF
V_FU
–
I_LKU
–
V_FL
–
1
1.5
V
I_F = 0.3 A
–
5
mA I_F = 0.3 A
0.9
1.4
V
I_F = 0.3 A
4.4.19 Quiescent voltage
4.4.20 Input resistance
Input-Interface, Input FB
V_REFq
–
R_REF
–
200 –
6
–
mV I_REF = 0 µA
kΩ
0 V < V_REF < 0.5 V
4.4.21 Quiescent voltage
V_FBq
–
4.4.22 Input resistance
R_FB
–
Input-Interface, Input/Output HYST
200 –
6
–
mV I_FB = 0 µA
kΩ
0 V < V_FB < 0.5 V
4.4.23 Current Amplification
A_HYST = I_HYST / (I_REF - I_FB)
4.4.24 Current Offset
4.4.25 Threshold voltage High
4.4.26 Deadband voltage High
4.4.27 Deadband voltage Low
4.4.28 Threshold voltage Low
4.4.29 Hysteresis Window
4.4.30 Deadband Window
Input-Interface, Input RANGE
A_HYST
0.8
I_HYSTIO
-2
V_HYH / V_S –
V_DBH / V_S –
V_DBL / V_S –
V_HYL / V_S –
V_HYW / V_S 3
V_DBW / V_S 0.4
0.95 1.1
0.35 3
52
–
50.4 –
49.6 –
48
–
4
5
0.8
1.2
–
-20 µA < I_HYST < -10 µA;
10 µA < I_HYST < 20 µA;
I_REF = 250 µA;
V_HYST = V_S / 2
µA
I_REF = I_FB = 250 µA;
V_HYST = V_S / 2
%
–
%
–
%
–
%
–
%
(V_HYH - V_HYL) / V_S
%
(V_DBH - V_DBL) / V_S
4.4.31
4.4.32
4.4.33
Input current
Switch-OFF voltage High
Switch-OFF voltage Low
I_RANGE
-1
–
1
µA
0 V < V_RANGE < V_S
V_OFFH
-25
0
100 mV refer to V_S
V_OFFL
300
400
500
mV refer to GND
Data Sheet
8
Rev. 1.3, 2008-02-04