SPW12N50C3 Datasheet, PDF (8/11 Pages) Infineon Technologies AG – Cool MOS Power Transistor

Final data
SPW12N50C3
13 Avalanche SOA
I_AR = f (t_AR)
par.: T_j ≤ 150 °C
11
A
9
14 Avalanche energy
E_AS = f (T_j)
par.: I_D = 5.5 A, V_DD = 50 V
350
mJ
8
250
7
200
6
5
Tj (START)=25°C
4
3
Tj (START) =125°C
2
1
150
100
50
0
10
-3
10 ^-2
10 ^-1
10 ⁰
10 ¹
10 ²
µs ^{10 4}
t_AR
0
20 40 60 80 100 120 °C 160
T_j
15 Drain-source breakdown voltage
V_(BR)DSS = f (T_j)
SPW12N50C3
600
V
16 Avalanche power losses
P_AR = f (f )
parameter: E_AR=0.6mJ
300
570
560
550
540
530
520
510
500
490
480
470
460
450
-60 -20
20
60 100 °C
180
T_j
W
200
150
100
50
0
10
4
10 ⁵
Hz
10 ⁶
f
Page 8
2003-06-30