SPW12N50C3 Datasheet, PDF (6/11 Pages) Infineon Technologies AG – Cool MOS Power Transistor

Final data
SPW12N50C3
5 Transient thermal impedance FullPAK 6 Typ. output characteristic
Z_thJC = f (t_p)
parameter: D = t_p/t
10 ¹
K/W
10 ⁰
I_D = f (V_DS); T_j=25°C
parameter: t_p = 10 µs, V_GS
40
A
20V
10V
8V
32
7V
10 ^-1
D = 0.5
D = 0.2
D = 0.1
10 ^-2
D = 0.05
D = 0.02
D = 0.01
single pulse
10 ^-3
10
-4
10
-7
10 ^-6
10 ^-5
10 ^-4
10 ^-3
10 ^-2
10 ^-1
s ^{10 1}
t_p
28
6.5V
24
20
6V
16
12
5.5V
8
5V
4
4.5V
0
0
5
10
15
V
25
V_DS
7 Typ. output characteristic
I_D = f (V_DS); T_j=150°C
parameter: t_p = 10 µs, V_GS
22
A
20V
8V
7.5V
18
7V
6V
16
8 Typ. drain-source on resistance
R_DS(on)=f(I_D)
parameter: T_j=150°C, V_GS
2
Ω
1.6
4V 4.5V 5V
5.5V
6V
14
1.4
5.5V
12
1.2
10
8
5V
1
6
4.5V
4
4V
2
0
0
5
10
15
V
25
V_DS
0.8
6.5V
0.6
8V
20V
0.4
0 2 4 6 8 10 12 14 16 _A 20
I_D
Page 6
2003-06-30