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| SPP11N60C2 Datasheet, PDF (8/14 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor | |||
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Final data
SPP11N60C2, SPB11N60C2
SPA11N60C2
13 Forward characteristics of body diode
IF = f (VSD)
parameter: Tj , tp = 10 µs
10 2 SPP11N60C2
14 Typ. switching time
t = f (ID), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, RG=6.8â¦
10 3
A
ns
tr
10 1
10 2
10 0
10 -1
0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
VSD
15 Typ. switching time
t = f (RG), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, ID=11 A
10 3
ns
10 2
td(off)
td(on)
tr
tf
10 1
td(on)
td(off)
10 0
0
5
10
15
20
A
30
ID
16 Typ. switching losses
E = f (ID), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, RG=6.8â¦
0.7
*) Eon includes SDP06S60 diode
commutation losses.
mWs
0.5
0.4
tf
0.3
10 1
Eoff
0.2
Eon*
0.1
10 0
0
10 20 30 40 50 â¦
70
RG
0
0
5
10
15
A
25
ID
Page 8
2002-08-12
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