SPP11N60C2 Datasheet, PDF (1/14 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

Final data
SPP11N60C2, SPB11N60C2
SPA11N60C2
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
Product Summary
V_DS @ T_{jmax 650 V}
R_DS(on)
0.38 Ω
I_D
11 A
P-TO220-3-31 P-TO263-3-2 P-TO220-3-1
Type
SPP11N60C2
SPB11N60C2
SPA11N60C2
3
12
P-TO220-3-31
Package
Ordering Code
P-TO220-3-1 Q67040-S4295
P-TO263-3-2 Q67040-S4298
P-TO220-3-31 Q67040-S4332
Marking
11N60C2
11N60C2
11N60C2
Maximum Ratings
Parameter
Continuous drain current
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
Avalanche energy, single pulse
I_D=5.5A, V_DD=50V
Avalanche energy, repetitive t_AR limited by T_jmax2)
I_D=11A, V_DD=50V
Avalanche current, repetitive t_AR limited by T_jmax
Reverse diode dv/dt
I_S = 11 A, V_DS < V_DD, di/dt=100A/µs, T_jmax=150°C
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, T_C = 25°C
Operating and storage temperature
Page 1
Symbol
Value
SPP_B SPA
I_D
11
11¹⁾
7
7¹⁾
I_{D puls}
22
22
E_AS
340
340
Unit
A
A
mJ
E_AR
0.6
0.6
I_AR
11
11 A
dv/dt
6
6 V/ns
V_GS
V_GS
P_tot
T_j , T_stg
±20
±20 V
±30
±30
125
33 W
-55...+150
°C
2002-08-12