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| SGP10N60A_09 Datasheet, PDF (8/12 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation | |||
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SGP10N60A
SGW10N60A
25V
20V
1nF
C iss
15V
10V
5V
120V
480V
100pF
C oss
C rss
0V
0nC
25nC
50nC
75nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC = 10A)
10pF
0V
10V
20V
30V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
25µs
200A
20µs
15µs
10µs
5µs
150A
100A
50A
0µs
10V
11V
12V
13V
14V
15V
VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE = 600V, start at Tj = 25°C)
0A
10V
12V
14V
16V
18V
20V
VGE, GATE-EMITTER VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(VCE ⤠600V, Tj = 150°C)
8
Rev. 2.5 Nov 09
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