SGP10N60A_09 Datasheet, PDF (4/12 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

SGP10N60A
SGW10N60A
50A
I_c
T_C=80°c
40A
30A
20A
10A ^TC=110°c
I_c
0A
10Hz 100Hz 1kHz 10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T_j ≤ 150°C, D = 0.5, V_CE = 400V,
V_GE = 0/+15V, R_G = 25Ω)
t_p= 5 µs
10A
1A
0,1A
1V
1 5 µs
5 0 µs
2 0 0 µs
1ms
DC
10V
100V
1000V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, T_C = 25°C, T_j ≤ 150°C)
120W
100W
80W
60W
40W
20W
0W
25°C 50°C 75°C 100°C 125°C
T_C, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(T_j ≤ 150°C)
25A
20A
15A
10A
5A
0A
25°C 50°C 75°C 100°C 125°C
T_C, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V_GE ≤ 15V, T_j ≤ 150°C)
4
Rev. 2.5 Nov 09