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| SGP02N60 Datasheet, PDF (8/12 Pages) Infineon Technologies AG – FAST IGBT IN NPT TECHNOLOGY | |||
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SGP02N60,
SGB02N60
SGD02N60
25V
20V
C iss
100pF
15V
120V
480V
10V
5V
0V
0nC
5nC
10nC
15nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC = 2A)
25µs
Coss
10pF
Crss
0V
10V
20V
30V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
40A
20µs
30A
15µs
20A
10µs
10A
5µs
0µs
10V 11V 12V 13V 14V 15V
VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE = 600V, start at Tj = 25°C)
0A
10V 12V 14V 16V 18V 20V
VGE, GATE-EMITTER VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(VCE ⤠600V,Tj = 150°C)
8
Jul-02
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