English
Language : 

SGP02N60 Datasheet, PDF (3/12 Pages) Infineon Technologies AG – FAST IGBT IN NPT TECHNOLOGY
SGP02N60,
SGB02N60
SGD02N60
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=25°C,
VCC=400V,IC=2A,
VGE=0/15V,
RG=118Ω,
Lσ1) =180nH,
Cσ1) =180pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
Unit
max.
20
13
259
52
0.036
0.028
0.064
24 ns
16
311
62
0.041 mJ
0.036
0.078
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=150°C,
VCC=400V, IC=2A,
VGE=0/15V,
RG=118Ω,
Lσ1) =180nH,
Cσ1) =180pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
Unit
max.
20
14
287
67
0.054
0.043
0.097
24 ns
17
344
80
0.062 mJ
0.056
0.118
1) Leakage inductance L σ an d Stray capacity Cσ due to dynamic test circuit in Figure E.
3
Jul-02