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FP15R12W1T4 Datasheet, PDF (8/12 Pages) Infineon Technologies AG – EasyPIM™ module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC | |||
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Technische Information / technical information
IGBT-Module
IGBT-modules
FP15R12W1T4
Vorläufige Daten
preliminary data
Schaltverluste IGBT-Wechselr. (typisch)
switching losses IGBT-Inverter (typical)
EÃà = f (Râ¢), EÃÃà = f (Râ¢)
Vâ¢Å = ±15 V, Iâ = 15 A, Vâ Å = 600 V
Transienter Wärmewiderstand IGBT-Wechselr.
transient thermal impedance IGBT-inverter
ZÃÃÅ⢠= f (t)
9,0
EÃÃ, TÃà = 125°C
8,0
EÃÃ, TÃà = 150°C
EÃÃÃ, TÃà = 125°C
EÃÃÃ, TÃà = 150°C
7,0
6,0
5,0
4,0
3,0
2,0
1,0
0,0 0 40 80 120 160 200 240 280 320 360 400
R⢠[Ã]
10
ZÃÃÅ⢠: IGBT
1
0,10,001
i:
1
2
3
4
rÃ[K/W]: 0,154 0,345 0,865 0,736
ÏÃ[s]: 0,0005 0,005 0,05 0,2
0,01
0,1
1
10
t [s]
Sicherer Rückwärts-Arbeitsbereich IGBT-Wr. (RBSOA)
reverse bias safe operating area IGBT-inv. (RBSOA)
Iâ = f (Vâ Å )
Vâ¢Å = ±15 V, Râ¢ÃÃà = 39 Ã, TÃà = 150°C
Durchlasskennlinie der Diode-Wechselr. (typisch)
forward characteristic of diode-inverter (typical)
IÅ = f (VÅ)
33
Iâ , Modul
30
Iâ , Chip
27
24
21
18
15
12
9
6
3
0 0 200 400 600 800 1000 1200 1400
Vâ Å [V]
30
TÃà = 25°C
27
TÃà = 125°C
TÃà = 150°C
24
21
18
15
12
9
6
3
00,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0
VÅ [V]
prepared by: DK
approved by: MB
date of publication: 2009-10-30
revision: 2.2
8
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