BSP320S Datasheet, PDF (8/8 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)

BSP 320S
Avalanche Energy E_AS = f (T_j)
parameter: I_D = 2.9 A,V_DD = 25 V
R_GS = 25 Ω
65
mJ
55
50
45
40
35
30
25
20
15
10
5
0
20
40
60
80 100 120 ˚C
160
T_j
Drain-source breakdown voltage
V_(BR)DSS = f (T_j)
Typ. gate charge
V_GS = f (Q_Gate)
parameter: I_{D puls} =2.9A
BSP320S
16
V
12
10
8
0,2 V_{DS max}
6
4
2
0
02468
0,8 V_{DS max}
10 12 _nC 15
Q_Gate
BSP320S
72
V
68
66
64
62
60
58
56
54
-60 -20
20
60 100 ˚C
180
T_j
Data Sheet
8
05.99