BSP320S Datasheet, PDF (1/8 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)

SIPMOS® Small-Signal-Transistor
Features
• N channel
• Enhancement mode
• Avalanche rated
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
• dv/dt rated
BSP 320S
V_DS
60 V
R_DS(on) 0.12 Ω
I_D
2.9 A
4
Type
BSP320S
Package
SOT-223
Ordering Code
Q67000-S4001
Maximum Ratings , at Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
Continuous drain current
Pulsed drain current
T_A = 25 ˚C
Avalanche energy, single pulse
I_D = 2.9 A, V_DD = 25 V, R_GS = 25 Ω
I_D
IDpulse
E_AS
Avalanche current,periodic limited by T_jmax
Avalanche energy, periodic limited by T_jmax
Reverse diode dv/dt
I_AR
E_AR
dv/dt
I_S = 2.9 A, V_DS = 20 V, di/dt = 200 A/µs,
T_jmax = 150 ˚C
Gate source voltage
V_GS
Power dissipation
P_tot
T_A = 25 ˚C
Operating temperature
T_j
Storage temperature
T_stg
IEC climatic category; DIN IEC 68-1
Pin 1
G
Pin 2/4
D
3
2
1
VPS05163
Pin 3
S
Value
2.9
11.6
60
2.9
0.18
6
Unit
A
mJ
A
mJ
kV/µs
±20
V
1.8
W
-55 ... +150
˚C
-55 ... +150
55/150/56
Data Sheet
1
05.99