BFP740FESD Datasheet, PDF (8/29 Pages) Infineon Technologies AG – Robust High Performance Low Noise Bipolar RF Transistor

BFP740FESD
Product Brief
2
Product Brief
The BFP740FESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor
(HBT) in a thin, small, flat, 4-pin dual emitter plastic package with visible leads. The device is fitted with internal
protection circuits, which enhance robustness against ESD and high RF input power strongly. The device
combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide
range of wireless applications.
The BFP740FESD is especially well-suited for portable battery-powered applications in which reduced power
consumption is a key requirement. Device design supports collector voltages up to 4.2 V.
Table 1 Quick Reference DC Characteristics at T_A = 25°C
Parameter
Symbol
Values
Min. Typ. Max.
Collector emitter breakdown voltage V_(BR)CEO 4.2
4.7
–
Collector base leakage current
I_CBO
–
–
400
DC current gain
Collector current
Total power dissipation
h_FE
160 250 400
I_C
–
–
45
P_tot
–
–
160
Unit Note / Test Condition
V
I_C = 1 mA, I_B = 0
Open base
nA V_CB = 2 V, I_E = 0
Open emitter
V_CE = 3 V, I_C = 25 mA
mA
mW T_S ≤ 100 °C
Data Sheet
8
Revision 1.1, 2010-06-29