BFP740FESD Datasheet, PDF (23/29 Pages) Infineon Technologies AG – Robust High Performance Low Noise Bipolar RF Transistor

BFP740FESD
Electrical Characteristics
Figure 12
44
41
0.15GHz
38
35
0.45GHz
32
0.90GHz
29
1.50GHz
1.90GHz
26
2.40GHz
3.50GHz
23
20
5.50GHz
17
14
10.00GHz
11
8
5
0 5 10 15 20 25 30 35 40 45
I_C [mA]
Maximum Power Gain G_max = f (I_C), V_CE = 3 V, f = Parameter in GHz
Figure 13
44
41
38
0.15GHz
35
0.45GHz
32
0.90GHz
29
1.50GHz
26
21..4900GGHHzz
3.50GHz
23
20
5.50GHz
17
14
10.00GHz
11
8
5
0
1
2
3
4
5
V_CE [V]
Maximum Power Gain G_max = f (V_CE), I_C = 25 mA, f = Parameter in GHz
Data Sheet
23
Revision 1.1, 2010-06-29