BFP720FESD_12 Datasheet, PDF (8/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

2
Features
• Robust very low noise amplifier based on Infineon´s
reliable, high volume SiGe:C wafer technology
• 2 kV ESD robustness (HBM) due to integrated protection circuits
• High maximum RF input power of 21 dBm
• 0.6 dB minimum noise figure typical at 2.4 GHz,
0.8 dB at 5.5 GHz, 5 mA
• 26 dB maximum gain G_ms typical at 2.4 GHz,
22 dB G_ms at 5.5 GHz, 15 mA
• 21 dBm OIP₃ typical at 5.5 GHz, 15 mA
• Thin small flat Pb-free (RoHS compliant) and halogen-free
package with visible leads
• Qualification report according to AEC-Q101 available
BFP720FESD
Features
Applications Examples
As Low Noise Amplifier (LNA) in
• Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB,
Bluetooth
• Satellite communication systems: Navigation (GPS, Glonass), satellite radio (SDARs, DAB) and LNB
• 3G/4G UMTS/LTE mobile phone applications
• Multimedia applications such as mobile/portable TV, CATV, FM Radio
• ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, amplifier in VCO's and buffer amplifier.
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
BFP720FESD
Package
TSFP-4-1
1=B
Pin Configuration
2=E
3=C
4=E
Marking
T3s
Data Sheet
8
Revision 1.2, 2012-10-16