BFP720FESD_12 Datasheet, PDF (22/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP720FESD
Electrical Characteristics
43
40
0.15GHz
37
0.45GHz
34
31
0.90GHz
1.50GHz
28
1.90GHz
2.40GHz
25
3.50GHz
22
5.50GHz
19
16
10.00GHz
13
10
0
5
10
15
20
25
30
I_C [mA]
Figure 5-11 Maximum Power Gain G_max = f (I_C), V_CE = 3 V, f = Parameter in GHz
43
40
0.15GHz
37
34
0.45GHz
31
0.90GHz
28
1.50GHz
1.90GHz
2.40GHz
25
3.50GHz
22
5.50GHz
19
16
10.00GHz
13
10
0
1
2
3
4
5
V_CE [V]
Figure 5-12 Maximum Power Gain G_max = f (V_CE), I_C = 15 mA, f = Parameter in GHz
Data Sheet
22
Revision 1.2, 2012-10-16