AUIRF7343Q Datasheet, PDF (8/11 Pages) International Rectifier – Advanced Planar Technology Ultra Low On-Resistance

P-Channel
AUIRF7343Q
1200
960
720
VC_GisSs
=
=
0V,
C_gs
+
f = 1MHz
C_{gd ,} C_ds
C_rss = C_gd
C_oss = C_ds + C_gd
SHORTED
C_iss
480
240
0
1
C_oss
C_rss
10
100
-V_DS, Drain-to-Source Voltage (V)
Fig 20. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ID = -3.1A}
16
V_DS =-48V
V_DS =-30V
V_DS =-12V
12
8
4
0
0
10
20
30
40
Q_G, Total Gate Charge (nC)
Fig 21. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P_DM
t₁
t₂
0.1
0.0001
0.001
Notes:
1. Duty factor D = t₁ / t ₂
2. Peak T_J = P _DM x Z_thJA + T_A
0.01
0.1
1
10
100
t₁, Rectangular Pulse Duration (sec)
Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
8
2015-9-30