AUIRF7343Q Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Planar Technology Ultra Low On-Resistance

AUTOMOTIVE GRADE
AUIRF7343Q
Features
 Advanced Planar Technology
 Ultra Low On-Resistance
 Logic Level Gate Drive
 Dual N and P Channel MOSFET
 Surface Mount
 Available in Tape & Reel
 150°C Operating Temperature
 Lead-Free, RoHS Compliant
 Automotive Qualified *
N-CHANNEL MOSFET
N-CH P-CH
S1
1
G1
2
8
D1
7
D1
V_DSS
55V -55V
S2
3
6 _D2 ^RDS(on) ^{typ. 0.043 0.095ï€} 
G2
4
5
D2
max. 0.050 0.105
P-CHANNEL MOSFET
I_D
4.7A -3.4A
Top View
Description
Specifically designed for Automotive applications, these HEXFET® Power
MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to
achieve extremely low on-resistance per silicon area. Additional features of
these Automotive qualified HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and improved repetitive
avalanche rating. These benefits combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a wide
variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics and
dual MOSFET die capability making it ideal in a variety of power applications.
This dual, surface mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
SO-8
AUIRF7343Q
G
Gate
D
Drain
S
Source
Base part number
AUIRF7343Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7343QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Parameter
Drain-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation 
Maximum Power Dissipation 
Max.
N-Channel
P-Channel
55
-55
4.7
-3.4
3.8
-2.7
38
-27
2.0
1.3
Units
V
A
W
E_AS
I_AR
E_AR
V_GS
dv/dt
T_J
T_STG
Single Pulse Avalanche Energy (Thermally Limited) 
Avalanche Current
Repetitive Avalanche Energy
Gate-to-Source Voltage
Peak Diode Recovery dv/dt 
Operating Junction and
Storage Temperature Range
72
114
4.7
-3.4
0.20
± 20
5.0
-5.0
-55 to + 150
mJ
A
mJ
V
V/ns
°C
Thermal Resistance
Symbol
Parameter
R_JA
Junction-to-Ambient ( PCB Mount, steady state) 
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
Max.
62.5
Units
°C/W
2015-9-30