SPU30N03S2L-10 Datasheet, PDF (7/8 Pages) Infineon Technologies AG – OptiMOS Power-Transistor

Preliminary data
SPU30N03S2L-10
13 Typ. avalanche energy
E_AS = f (T_j)

par.: I_D = 30 A , V_DD = 25 V, R_GS = 25
160
mJ
14 Typ. gate charge
V_GS = f (Q_Gate)
parameter: I_D = 30 A pulsed
16 ^{SPU30N03S2L-10}
V
120
100
80
60
40
20
025 _{45 65 85 105 125 145 °C 185}
T_j
15 Drain-source breakdown voltage
V_(BR)DSS = f (T_j)
parameter: I_D=10 mA
36 ^{SPU30N03S2L-10}
V
12
10
0,2 V_{DS max}
0,8 V_{DS max}
8
6
4
2
00 _{5 10 15 20 25 30 35 40 nC 50}
Q_Gate
34
33
32
31
30
29
28
27-60 _-20
20
60 100 140 °C 200
T_j
Page 7
2002-02-11