SPU30N03S2L-10 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – OptiMOS Power-Transistor

Preliminary data

_{OptiMOS Power-Transistor}
Feature
 N-Channel
 Logic Level
 Low on-resistance R_DS(on)
 Excellent Gate Charge x R_DS(on) product (FOM)

Superior thermal resistance
175°C operating temperature
 Avalanche rated
 dv/dt rated
Ideal for fast switching applications
SPU30N03S2L-10
Product Summary
V_DS
30 V

R_DS(on)
10
m
I_D
30 A
P-TO251
Type
Package
SPU30N03S2L-10 P-TO251
Ordering Code
Q67042-S4042
Marking
2N03L10
Maximum Ratings,at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
T_C=25°C,¹⁾
T_C=100°C
Pulsed drain current
T_C=25°C
Avalanche energy, single pulse

I_D=30 A , V_DD=25V, R_GS=25
I_D
I_{D puls}
E_AS
Reverse diode dv/dt
dv/dt
I_S=30A, V_DS=24V, di/dt=200A/µs, T_jmax=175°C
Gate source voltage
V_GS
Power dissipation
P_tot
T_C=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T_j , T_stg
Value
30
30
120
150
6
±20
82
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2002-02-11