SPB100N03S2-03G Datasheet, PDF (7/9 Pages) Infineon Technologies AG – OptiMOS Power-Transistor

13 Typ. avalanche energy
E_AS = f (T_j)
par.: ID = 80 A, V_DD = 25 V, R_GS = 25 Ω
850
mJ
700
600
500
400
300
200
100
0
25 45 65 85 105 125 145 °C 185
T_j
15 Drain-source breakdown voltage
V_(BR)DSS = f (T_j)
parameter: ID=10 mA
36 ^{SPP100N03S2-03}
V
SPB100N03S2-03G
14 Typ. gate charge
V_GS = f (Q_Gate)
parameter: ID = 100 A pulsed
SPP100N03S2-03
16
V
12
0,2 V
DS max
10
0,8 V_{DS max}
8
6
4
2
0
0 20 40 60 80 100 120 140 _nC 170
Q_Gate
34
33
32
31
30
29
28
27
-60 -20 20 60 100 140 °C 200
T_j
Page 7
2010-01-25