SPB100N03S2-03G Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS Power-Transistor

SPB100N03S2-03G
OptiMOS TM Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Excellent Gate Charge x R_DS(on) product (FOM)
• Superior thermal resistance
Product Summary
V_DS
30 V
R_DS(on) max. SMD version
3
mΩ
I_D
100 A
P-TO263 -3
• 175°C operating temperature
• Avalanche rated
• dv/dt rated; Halogen Free according to IEC61249-2-21
Type
Package
SPB100N03S2-03 P- TO263 -3
Marking
PN0303
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
I_D
T_C=25°C
Pulsed drain current
T_C=25°C
Avalanche energy, single pulse
I_D=80A, V_DD=25V, R_GS=25Ω
Repetitive avalanche energy, limited by T_jmax²⁾
Reverse diode dv/dt
I_S=100A, V_DS=24V, di/dt=200A/µs, T_jmax=175°C
Gate source voltage
Power dissipation
T_C=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I_{D puls}
E_AS
E_AR
dv/dt
V_GS
P_tot
T_j , T_stg
Page 1
Value
Unit
A
100
100
400
810
mJ
30
6
kV/µs
±20
V
300
W
-55... +175
°C
55/175/56
2010-01-25