SGP30N60_08 Datasheet, PDF (7/12 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology

SGP30N60
SGW30N60
5.0mJ
4.5mJ
*) E_on and E_ts include losses
due to diode recovery.
E_ts*
4.0mJ
3.5mJ
3.0mJ
2.5mJ
E_on*
2.0mJ
E_off
1.5mJ
1.0mJ
0.5mJ
0.0mJ
10A 20A 30A 40A 50A 60A 70A
I_C, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T_j = 150°C, V_CE = 400V,
V_GE = 0/+15V, R_G = 11Ω,
Dynamic test circuit in Figure E)
4.0mJ
3.5mJ
*) E_on and E_ts include losses
due to diode recovery.
3.0mJ
2.5mJ
E_ts*
2.0mJ
1.5mJ
E_off
1.0mJ
E_on*
0.5mJ
0.0mJ
0Ω
10Ω
20Ω
30Ω
40Ω
R_G, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T_j = 150°C, V_CE = 400V,
V_GE = 0/+15V, I_C = 30A,
Dynamic test circuit in Figure E)
3.0mJ
2.5mJ
*) E_on and E_ts include losses
due to diode recovery.
2.0mJ
1.5mJ
1.0mJ
0.5mJ
E_ts*
E_on*
E_off
0.0mJ
0°C
50°C
100°C
150°C
T_j, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V_CE = 400V, V_GE = 0/+15V,
I_C = 30A, R_G = 11Ω,
Dynamic test circuit in Figure E)
10⁰K/W
D=0.5
0.2
10^-1K/W
0.1
0.05
0.02
10^-2K/W
0.01
10^-3K/W
R,(1/W)
0.3681
0.0938
0.0380
R1
τ, (s)
0.0555
1.26*10^-3
1.49*10^-4
R2
single pulse
C1=τ1/R1 C2=τ2/R2
10^-4K/W
1µs 10µs 100µs 1ms 10ms 100ms 1s
t_p, PULSE WIDTH
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = t_p / T)
7
Rev. 2.4 Sep. 08