SGP30N60_08 Datasheet, PDF (3/12 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology

SGP30N60
SGW30N60
Switching Characteristic, Inductive Load, at T_j=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
T_j=25°C,
V_CC=400V,I_C=30A,
V_GE=0/15V,
R _G = 11Ω ,
L_σ¹⁾ =180nH,
C_σ¹⁾ =900pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
44
34
291
58
0.64
0.65
1.29
Unit
max.
53 ns
40
349
70
0.77 mJ
0.85
1.62
Switching Characteristic, Inductive Load, at T_j=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
T_j=150°C
V_CC=400V,I_C=30A,
V_GE=0/15V,
R_G= 11Ω,
L_σ¹⁾ =180nH,
C_σ¹⁾ =900pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
44
34
324
67
0.98
0.92
1.90
Unit
max.
53 ns
40
389
80
1.18 mJ
1.19
2.38
1) _{Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.}
3
Rev. 2.4 Sep. 08